SAMSUNG 2TB 990 EVO Plus Gen4 NVMeᵀᴹ Solid State Drive
SPECIFICATION
|
Part Number |
(MZ-V9S2T0BW) |
|
General Features |
|
|
Capacity |
2TB |
|
Interface |
PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
|
Form Factor |
M.2 (2280) |
|
Performance |
|
|
Sequential Read/Write |
7,250 MB/s / 6,300 MB/s |
|
Random Read/Write (IOPS, QD32) |
1,000K / 1,350K |
|
Power |
|
|
Active (Read/Write) |
4.6W / 4.2W |
|
Device Sleep (L1.2) |
Typical 60mW / Typical 5mW |
|
Data Encryption |
Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
|
Endurance |
|
|
Total Bytes Written (TBW) |
1,200 |
|
Hardware |
|
|
NAND |
Samsung V NAND TLC (V8) |
|
Controller |
In-House Controller |
|
Cache Memory |
HMB (Host Memory Buffer) |
|
Dimensions |
|
|
Product (W x H x D) |
0.9 x 0.1 x 3.2 inches |
|
Package Size |
3.9 x 0.9 x 5.6 inches |
|
Inner Box Size |
7.2 x 5.4 x 9.4 inches |
|
Master Box Size |
37.0 x 10.4 x 18.0 inches |
SPECIFICATION
|
Part Number |
(MZ-V9S2T0BW) |
|
General Features |
|
|
Capacity |
2TB |
|
Interface |
PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
|
Form Factor |
M.2 (2280) |
|
Performance |
|
|
Sequential Read/Write |
7,250 MB/s / 6,300 MB/s |
|
Random Read/Write (IOPS, QD32) |
1,000K / 1,350K |
|
Power |
|
|
Active (Read/Write) |
4.6W / 4.2W |
|
Device Sleep (L1.2) |
Typical 60mW / Typical 5mW |
|
Data Encryption |
Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
|
Endurance |
|
|
Total Bytes Written (TBW) |
1,200 |
|
Hardware |
|
|
NAND |
Samsung V NAND TLC (V8) |
|
Controller |
In-House Controller |
|
Cache Memory |
HMB (Host Memory Buffer) |
|
Dimensions |
|
|
Product (W x H x D) |
0.9 x 0.1 x 3.2 inches |
|
Package Size |
3.9 x 0.9 x 5.6 inches |
|
Inner Box Size |
7.2 x 5.4 x 9.4 inches |
|
Master Box Size |
37.0 x 10.4 x 18.0 inches |
Description
SPECIFICATION
|
Part Number |
(MZ-V9S2T0BW) |
|
General Features |
|
|
Capacity |
2TB |
|
Interface |
PCIe® 4.0 x4 / 5.0 x2 NVMe™ 2.0 |
|
Form Factor |
M.2 (2280) |
|
Performance |
|
|
Sequential Read/Write |
7,250 MB/s / 6,300 MB/s |
|
Random Read/Write (IOPS, QD32) |
1,000K / 1,350K |
|
Power |
|
|
Active (Read/Write) |
4.6W / 4.2W |
|
Device Sleep (L1.2) |
Typical 60mW / Typical 5mW |
|
Data Encryption |
Class 0 (AES 256), TCG/Opal v2.0, MS eDrive (IEEE1667) |
|
Endurance |
|
|
Total Bytes Written (TBW) |
1,200 |
|
Hardware |
|
|
NAND |
Samsung V NAND TLC (V8) |
|
Controller |
In-House Controller |
|
Cache Memory |
HMB (Host Memory Buffer) |
|
Dimensions |
|
|
Product (W x H x D) |
0.9 x 0.1 x 3.2 inches |
|
Package Size |
3.9 x 0.9 x 5.6 inches |
|
Inner Box Size |
7.2 x 5.4 x 9.4 inches |
|
Master Box Size |
37.0 x 10.4 x 18.0 inches |
